High temperature package flip-chip bonding to ceramic
US7408243B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 14, 2005 |
| Grant date | Aug 5, 2008 |
| Priority date | — |
| Expiry date | Aug 18, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A sensor package apparatus and method are disclosed in which a sensor die is provided and based on a substrate. An integrated circuit is generally associated with the sensor die. A leadframe is also provided, which is connected by at least one weld to the integrated circuit and the substrate. The integrated circuit, the leadframe, and the sensor die are configured in a flip-chip arrangement to protect the sensor die and form a sensor package apparatus that provides compact and robust electrical and physical connections thereof. The integrated circuit can be formed from, for example, silicon carbide. A metallization layer can also be formed on the integrated circuit, wherein the integrated circuit is configured upon the substrate of the sensor die. The metallization layer thus adheres to the integrated circuit via the weld(s).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.