Film bulk acoustic wave resonator, film bulk acoustic wave resonator filter and method of manufacturing film bulk acoustic wave resonator
US7408287B2 · kind B2 · utility
6Cited by
5References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 21, 2006 |
| Grant date | Aug 5, 2008 |
| Priority date | — |
| Expiry date | Nov 21, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/0471
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present invention provides a film bulk acoustic wave resonator (FBAR) filter that can keep the Q factor high. The FBAR filter comprises a first FBAR with a first resonant frequency and a second FBAR with a second resonant frequency, formed on a same substrate. The FBAR filter has such a structure that a first underlayer is formed between the substrate and a first bottom electrode layer and a second underlayer is formed between the substrate and a second bottom electrode layer, the first underlayer thickness being different from the second underlayer thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.