Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus
US7410848B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2004 |
| Grant date | Aug 12, 2008 |
| Priority date | — |
| Expiry date | Jan 17, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1008
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.