Switching device for a pixel electrode and methods for fabricating the same
US7411212B2 · kind B2 · utility
2Cited by
5References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2005 |
| Grant date | Aug 12, 2008 |
| Priority date | — |
| Expiry date | Feb 4, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0321
Abstract
The invention discloses a switching element of a pixel electrode for a display device and methods for fabricating the same. A gate is formed on a substrate. A first copper silicide layer is formed on the gate. An insulating layer is formed on the first copper silicide layer. A semiconductor layer is formed on the insulating layer. A source and a drain are formed on the semiconductor layer. Moreover, a second copper silicide layer is sandwiched between the semiconductor layer and the source/drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.