Radiation-hardened silicon-on-insulator CMOS device, and method of making the same

US7411250B2 · kind B2 · utility

Assignee

• Peregrine Semiconductor Corporation · US

Inventors

• Anthony Mark Miscione · Ramona, US
• George Imthurn · San Diego, US
• Eugene F. Lyons · Santee, US
• Michael A. Stuber · Carlsbad, US

Key dates

• Filing date: May 13, 2004
• Grant date: Aug 12, 2008
• Expiry date: Jun 30, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/03

Abstract

A silicon-on-insulator metal oxide semiconductor device comprising ultrathin silicon-on-sapphire substrate; at least one P-channel MOS transistor formed in the ultrathin silicon layer; and N-type impurity implanted within the ultrathin silicon layer and the sapphire substrate such that peak N-type impurity concentration in the sapphire layer is greater than peak impurity concentration in the ultrathin silicon layer.