Etch-stop layers for patterning block structures for reducing thermal protrusion
US7411264B2 · kind B2 · utility
2Cited by
55References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2004 |
| Grant date | Aug 12, 2008 |
| Priority date | — |
| Expiry date | Sep 27, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3136
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a thin-film structure that includes an etch-stop layer having a first side and a second side, a patterned compensation layer for dissipating thermal energy, and an etch-vulnerable layer, where the etch-stop layer substantially impedes etching. The patterned compensation layer is adjacent the first side of the etch-stop layer, and the etch-vulnerable layer is adjacent the second side of the etch-stop layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.