Programmable magnetic memory device FP-MRAM
US7411814B2 · kind B2 · utility
4Cited by
3References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 30, 2003 |
| Grant date | Aug 12, 2008 |
| Priority date | — |
| Expiry date | Sep 30, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/0021
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A memory device has an information plane (32) for storing data bits in a magnetic state of an electro-magnetic material at an array of bit locations (31). The device further has an array of electro-magnetic sensor elements (51) that are aligned with the bit locations. The information plane (32) is programmable or programmed via a separate magnetic writing device (21). In particular a read-only sensor element (60) is described for a read-only magnetic memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.