Gas supply method in a CVD coating system for precursors with a low vapor pressure

US7413767B2 · kind B2 · utility

Assignee

• Schott AG · DE

Inventors

• Hartmut Bauch · Ober-Olm, DE
• Lars Bewig · Bad Gandersheim, DE
• Lutz Klippe · Wiesbaden, DE
• Thomas Kupper · Zürich, CH

Key dates

• Filing date: Dec 16, 2004
• Grant date: Aug 19, 2008
• Expiry date: Oct 29, 2025

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/448
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for producing optical functional coatings comprising niobium, tantalum, titanium or aluminum by supplying a precursor gas of low vapor pressure in a CVD coating system. A precursor selected from the group consisting of Nb, Ta, Ti, and Al compounds having a vapor pressure is maintained within a first supply container at a first temperature T1 and a first pressure p1. Precursor vapor of the precursor is supplied from the first supply container to an intermediate storage device through a first gas line which fluidly communicates the first supply container and the intermediate storage device. A carrier gas or reaction gas is supplied to the first gas line such that a mixture of the precursor with the carrier gas or the reaction gas is provided. The mixture is maintained in the intermediate storage device at a constant second pressure p2 lower than the first pressure p1 and at a second temperature T2 lower than the first temperature T1, and the mixture is supplied from the intermediate storage device through a second gas line.