Semiconductor device and method of manufacturing the same
US7413913B2 · kind B2 · utility
3Cited by
12References
11Claims
0Family size
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Key dates
| Filing date | Jan 3, 2007 |
| Grant date | Aug 19, 2008 |
| Priority date | — |
| Expiry date | Jan 3, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/30
Abstract
Two ferroelectric capacitors including a PZT film are connected to one MOS transistor. Electrodes of the ferroelectric capacitor are arranged above a main plane of a substrate parallel to the main plane. Therefore, high capacity can be obtained easily. Furthermore, a (001) direction of the PZT film is parallel to the virtual straight line linking between the two electrodes. Therefore, a direction in which an electric field is applied coincides with a direction of a polarization axis, so that high electric charge amount of remanent polarization can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.