Double-sided etching method using embedded alignment mark
US7413920B2 · kind B2 · utility
1Cited by
1References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 28, 2006 |
| Grant date | Aug 19, 2008 |
| Priority date | — |
| Expiry date | Feb 22, 2027 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2201/033
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A double-sided etching method using an embedded alignment mark includes: preparing a substrate having first and second alignment marks embedded in an intermediate portion thereof; etching an upper portion of the substrate so as to expose the first alignment mark from a first surface of the substrate; etching the upper portion of the substrate using the exposed first alignment mark; etching a lower portion of the substrate so as to expose the second alignment mark from a second surface of the substrate; and etching the lower portion of the substrate using the exposed second alignment mark.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.