Thin-film transistor and fabrication method thereof
US7413940B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 11, 2006 |
| Grant date | Aug 19, 2008 |
| Priority date | — |
| Expiry date | Jan 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A fabrication method of a TFT includes successively forming four thin films containing a first conductive layer, an insulation layer, a semiconductor layer, and a second conductive layer on a substrate, performing a first PEP process to pattern the four thin films for forming a semiconductor island and a gate electrode with the semiconductor layer and the first conductive layer respectively. Then, a laser ablation process is performed to define a channel pattern in the four thin films and remove a portion of the second conductive layer so that unconnected source electrode and drain electrode are formed with the second conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.