Process for atomic layer deposition
US7413982B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 29, 2006 |
| Grant date | Aug 19, 2008 |
| Priority date | — |
| Expiry date | Dec 3, 2026 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB33Y80/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a deposition process for thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising at least first, second, and third gaseous materials, wherein the first and second gaseous materials are reactive with each other such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate and wherein the third gaseous material is inert with respect to reacting with the first or second gaseous materials. The process comprises flowing the gaseous materials along the length direction of a plurality of elongated channels across the surface of the substrate surface in close proximity thereto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.