Patent · US Expired

Two-dimensional silicon controlled rectifier

US7414273B2 · kind B2 · utility

5Cited by
8References
8Claims
0Family size

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Key dates

Filing dateJul 7, 2005
Grant dateAug 19, 2008
Priority date
Expiry dateNov 9, 2025

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/711

Abstract

A two-dimensional silicon controlled rectifier (2DSCR) having the anode and cathode forming a checkerboard pattern. Such a pattern maximizes the anode to cathode contact length (the active area) within a given SCR area, i.e., effectively increasing the SCR width. Increasing the physical SCR area, increases the current handling capabilities of the SCR.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.