Two-dimensional silicon controlled rectifier
US7414273B2 · kind B2 · utility
5Cited by
8References
8Claims
0Family size
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Key dates
| Filing date | Jul 7, 2005 |
| Grant date | Aug 19, 2008 |
| Priority date | — |
| Expiry date | Nov 9, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/711
Abstract
A two-dimensional silicon controlled rectifier (2DSCR) having the anode and cathode forming a checkerboard pattern. Such a pattern maximizes the anode to cathode contact length (the active area) within a given SCR area, i.e., effectively increasing the SCR width. Increasing the physical SCR area, increases the current handling capabilities of the SCR.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.