Nonvolatile semiconductor memory device
US7414285B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2007 |
| Grant date | Aug 19, 2008 |
| Priority date | — |
| Expiry date | Oct 11, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
Abstract
A nonvolatile semiconductor memory device includes a first insulating film provided on a surface of a semiconductor substrate, a charge accumulation layer provided on the first insulating film, a second insulating film provided above the charge accumulation layer and contains silicon and nitrogen, a third insulating film provided on the second insulating film, and composed of a single-layer insulating film containing oxygen or a plural-layer stacked insulating film at least whose films on a top layer and a bottom layer contain oxygen, relative dielectric constant thereof being larger than it of a silicon oxide film, a fourth insulating film provided on the third insulating film and contains silicon and nitrogen, a control gate provided above the fourth insulating film, and a fifth insulating film provided between the charge accumulation layer and the second insulating film or between the fourth insulating film and the control gate, and contains silicon and oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.