Memory having a layer with electrical conductivity anisotropy
US7414953B2 · kind B2 · utility
2Cited by
162References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2007 |
| Grant date | Aug 19, 2008 |
| Priority date | — |
| Expiry date | Apr 5, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B9/1436
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A data storage device comprises a media including a memory layer within which are formable domains associated with information, and a conductive layer disposed over the memory layer, the conductive layer having anisotropically increased electrical conductivity in a thickness direction. A conductive tip contactable with the conductive layer is adapted to form domains within the memory layer and one of the conductive tip and the media is movable to access the memory layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.