Methods for analyzing critical defects in analog integrated circuits
US7415378B2 · kind B2 · utility
1Cited by
6References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 31, 2005 |
| Grant date | Aug 19, 2008 |
| Priority date | — |
| Expiry date | Mar 6, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/311
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention provides a method for analyzing critical defects in analog integrated circuits. The method for analyzing critical defects, among other possible steps, may include fault testing a power field effect transistor (120) portion of an analog integrated circuit (115) to obtain electrical failure data. The method may further include performing an in-line optical inspection of the analog integrated circuit (115) to obtain physical defect data, and correlating the electrical failure data and physical defect data to analyze critical defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.