Manufacturing method of semiconductor device
US7416928B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2005 |
| Grant date | Aug 26, 2008 |
| Priority date | — |
| Expiry date | Aug 24, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0241
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An amorphous semiconductor film and a semiconductor film including an element selected from Group 15 of the periodic table are formed over a substrate. An island-shaped region including an island-shaped amorphous semiconductor film and an island-shaped semiconductor film is formed. A source electrode and a drain electrode are formed over the island-shaped region. The island-shaped semiconductor film that is not covered by the source electrode and the drain electrode is removed using the source electrode and the drain electrode as a mask. At this time, the thickness of the island-shaped amorphous semiconductor film is reduced, and a portion of the island-shaped amorphous semiconductor film is exposed. A catalytic element promoting crystallization is added into a region in which the island-shaped amorphous semiconductor film is exposed. By a heat treatment, the island-shaped amorphous semiconductor film is crystallized and the catalytic element is gettered.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.