Method for producing an oxide confined semiconductor laser
US7416930B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2005 |
| Grant date | Aug 26, 2008 |
| Priority date | — |
| Expiry date | Jan 27, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for producing an oxide confined semiconductor laser uses a dual platform to synchronously produce a light emitting active area and a wire bonding area on a semiconductor material and use a metal protective material, an electrically conductive metal material, and a dielectric material together with an etching process, an oxide confined technology, and plating technology to produce the dual platform, an oxide layer, a dielectric layer, a protective layer, and a metal layer. The light emitting active area platform and the wire bonding area platform are independent, and the wire bonding area platform is produced on the semiconductor structure, such that an ion implant process can adjust the capacitance and provide a higher wire bonding strength. Since the electric layer is filled on the external sides of the dual platforms, the wire connected metal capacitance is lowered, and the planarization facilitates the production of the metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.