Vertical MIM capacitors and method of fabricating the same
US7416953B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2005 |
| Grant date | Aug 26, 2008 |
| Priority date | — |
| Expiry date | Jun 3, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
A method of fabricating a vertical MIM capacitor. An insulation layer is formed on the substrate. The insulation layer is patterned to form an opening in a predetermined area of a core electrode. Then, the opening is filled to form a sacrificial plug. Subsequently, the insulation layer is patterned to form a trench in a predetermined area of an outer electrode around the sacrificial plug. A fenced insulation layer is formed around the sacrificial plug simultaneously. After the sacrificial plug is removed, a metal layer is filled in the predetermined area of the core and outer electrodes. A vertical MIM capacitor comprising the core electrode, the fenced insulation layer, and the outer electrode is finally formed. The invention also provides a vertical MIM capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.