High resolution patterning of surface energy utilizing high resolution monomolecular resist for fabrication of patterned media masters
US7416991B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 2006 |
| Grant date | Aug 26, 2008 |
| Priority date | — |
| Expiry date | Oct 6, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/865
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for patterning and forming very small structures on a substrate such as a wafer. The process uses a difference in surface energy between a mask and the substrate to selectively deposit a hard mask material such as a metal onto the surface of the substrate. The mask can be formed extremely thin, such as only an atomic mono-layer thick, and can be patterned by ion beam photolithography. The pattern can, therefore, be formed with extremely high resolution. The thin mask layer can be constructed of various materials and can be constructed of perfluorpolyether diacrylate (PDA), which can be dip coated to and exposed to form a desirable positive photoresist mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.