Switching device for a pixel electrode and methods for fabricating the same
US7417254B2 · kind B2 · utility
2Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2006 |
| Grant date | Aug 26, 2008 |
| Priority date | — |
| Expiry date | Nov 17, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
The invention discloses a switching devise for a pixel electrode of display devise and methods for fabricating the same. A gate is formed on a portion of a substrate. A semiconductor layer is formed on the gate. A source and a drain are formed on a portion of the semiconductor layer. A low-k (low dielectric constant) materia layer, such as a layer of a-SiC:H or a-SiCN:H, is formed between the gate and the semiconductor layer and/or on the source/ drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.