Patent · US Active

Waveguide integrated circuit

US7417262B2 · kind B2 · utility

0Cited by

18References

22Claims

0Family size

Assignee

STMicroelectronics SA

Inventors

Sébastien Pruvost · Meylan, FR
Jocelyn Roux · Hurtières, FR

Key dates

Filing date	May 1, 2006
Grant date	Aug 26, 2008
Priority date	—
Expiry date	Aug 7, 2026

Classification

Technology area (CPC H)Electricity
CPC primaryH01P3/084
WIPO fieldTelecommunications
WIPO sectorElectrical engineering

Abstract

An integrated circuit includes many metallization levels. A thick dielectric region is placed above at least two metallization levels and laterally neighboring two or more metallization levels. That part of the two metallization levels which lie beneath the dielectric region forms a screen. A conducting strip is placed on the dielectric region so that the dielectric region forms a waveguide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.