Image sensor
US7417268B2 · kind B2 · utility
26Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2006 |
| Grant date | Aug 26, 2008 |
| Priority date | — |
| Expiry date | Jul 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
An image sensor including a pixel assembly, each pixel including a photodiode and an access transistor connected to a read circuit, the photodiode and the access transistor being formed in and above a first semiconductor substrate, all or part of the read circuit being formed in a second semiconductor substrate, the second substrate being placed above the first substrate and separated therefrom by an intermediary insulating layer covering the access transistor, the photodiode receiving incident photons on its lower surface side opposite to the intermediary insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.