Electrode structure having at least two oxide layers and non-volatile memory device having the same
US7417271B2 · kind B2 · utility
77Cited by
2References
19Claims
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Key dates
| Filing date | Jan 19, 2007 |
| Grant date | Aug 26, 2008 |
| Priority date | — |
| Expiry date | Jan 19, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/56
Abstract
An electrode structure having at least two oxide layers that more reliably switch and operate without the use of additional devices and a non-volatile memory device having the same are provided. The electrode structure may include a lower electrode, a first oxide layer formed on the lower electrode, a second oxide layer formed on the first oxide layer and an upper electrode formed on the second oxide layer wherein at least one of the first and second oxide layers may be formed of a resistance-varying material. The first oxide layer may be formed of an oxide having a variable oxidation state.
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