Substrate structure and manufacturing method of the same
US7417320B2 · kind B2 · utility
4Cited by
4References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2005 |
| Grant date | Aug 26, 2008 |
| Priority date | — |
| Expiry date | Oct 17, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/743
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Ti film is pattern-formed on a desired portion on a silicon substrate, and a Co film is formed on the substrate so as to cover the Ti film. CNTs are formed only on a portion, under which the Ti film is formed, of the surface of the Co film at approximately 600° C. by a thermal CVD method. The length of the CNT can be controlled by adjusting the thickness of the Ti film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.