Method of forming fine particle array on substrate and semiconductor element
US7419529B2 · kind B2 · utility
4Cited by
4References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2005 |
| Grant date | Sep 2, 2008 |
| Priority date | — |
| Expiry date | Jan 12, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An object of the present invention is to provide a method of forming fine particles on a substrate in which reoxidization of reduced fine particles is suppressed. Reduced fine particles (FeO fine particles) are formed by embedding metal oxide fine particles (Fe2O3 fine particles) fixed on a p type silicon semiconductor substrate into a silicon oxidized film, and carrying out a heat treatment in a reducing gas atmosphere. Presence of the silicon oxidized film enables suppression of reoxidization of the reduced fine particles (FeO fine particles) due to exposure to the ambient air.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.