Precursors for chemical vapor deposition
US7419698B2 · kind B2 · utility
24Cited by
27References
19Claims
0Family size
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Key dates
| Filing date | Oct 25, 2002 |
| Grant date | Sep 2, 2008 |
| Priority date | — |
| Expiry date | Jul 11, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07F7/003
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Ti, Zr Hf and La precursors for use in MOCVD techniques have a ligand of the general formula OCR1(R2)CH2X, wherein R1 is H or an alkyl group, R2 is an optionally substituted alkyl group and X is selected from OR and NR2, wherein R is an alkyl group or a substituted alkyl group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.