Method of manufacturing semiconductor probe having resistive tip
US7419843B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2005 |
| Grant date | Sep 2, 2008 |
| Priority date | — |
| Expiry date | Aug 23, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01Q70/16
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of manufacturing a semiconductor probe having a resistive tip. The method includes forming first and second mask films having a rectangular shape on a silicon substrate, first etching an upper surface of the silicon substrate, forming a third mask film corresponding to a width of a tip neck by etching the first mask film, forming the width of the tip neck to a predetermined width by second etching of the silicon substrate using the third mask film as a mask, and forming a peak forming portion of the tip by annealing the silicon substrate after removing the third mask film. A semiconductor probe having a uniform height and tips having a uniform neck width can be manufactured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.