Method and apparatus for providing flexible partially etched capacitor electrode interconnect
US7419873B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2004 |
| Grant date | Sep 2, 2008 |
| Priority date | — |
| Expiry date | Jan 11, 2026 |
Classification
- Technology area (CPC A)Human Necessities
- CPC primaryA61N1/3975
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present subject matter includes a capacitor stack disposed in a case, the capacitor stack including one or more substantially planar electrode layers. The one or more substantially planar electrode layers have an etched surface, an unetched surface, and a grade bordering the etched surface and the unetched surface. Also, the present subject matter includes a lid conforming sealingly connected to the material defining the first aperture. Additionally, the present subject matter includes a feedthrough assembly connected to the capacitor stack and passing through the feedthrough hole and sealingly connected to the material defining the feedthrough hole. In the present subject matter, the one or more substantially planar electrode layers are made by printing a curable resin mask onto the one or more substantially planar electrode layers and etching the layers, the curable resin mask defining the grade and adapted to resist etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.