Laser assisted nano deposition
US7419887B1 · kind B1 · utility
37Cited by
87References
10Claims
0Family size
Inventors
Key dates
| Filing date | Jul 26, 2005 |
| Grant date | Sep 2, 2008 |
| Priority date | — |
| Expiry date | May 16, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/786
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus and method is disclosed for forming a nano structure on a substrate with nano particles. The nano particles are deposited through a nano size pore onto the substrate. A laser beam is directed through a concentrator to focus a nano size laser beam onto the deposited nano particles on the substrate. The apparatus and method is suitable for fabricating patterned conductors, semiconductors and insulators on semiconductor wafers of a nano scale line width by direct nanoscale deposition of materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.