Transparent conductive film, semiconductor device and active matrix display unit
US7420215B2 · kind B2 · utility
7Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2007 |
| Grant date | Sep 2, 2008 |
| Priority date | — |
| Expiry date | Jun 22, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1201
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact property with an electrode or line made from Al or Al alloy film. Further, a semiconductor device having an electrode or line made from the transparent conductive film has high reliability and productivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.