Integration type semiconductor device and method for manufacturing the same
US7420283B2 · kind B2 · utility
18Cited by
5References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 10, 2005 |
| Grant date | Sep 2, 2008 |
| Priority date | — |
| Expiry date | Jul 6, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a plurality of power MOS cells on a semiconductor substrate; a plurality of lead wires connecting to a source and a drain of each power MOS cell through a contact hole; a plurality of collecting electrodes connecting in parallel with the lead wires through a via hole; an interlayer protection film on the collecting electrode; a thick film electrode connecting to the collecting electrode through the opening; and a terminal protection film having an opening for bonding connection. The openings are formed in the interlayer protection film such that a portion between the openings becomes a beam shape
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.