Memory
US7420833B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2004 |
| Grant date | Sep 2, 2008 |
| Priority date | — |
| Expiry date | Sep 9, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory capable of suppressing disturbance causing disappearance of data in a nonselected memory cell is provided. This memory comprises a memory cell array including a bit line, a word line arranged to intersect with the bit line and memory cells connected between the bit line and the word line, for accessing a selected memory cell thereby deteriorating a remanent polarization in an arbitrary memory cell and thereafter performing recovery for recovering all memory cells to remanent polarizations immediately after a write operation or remanent polarizations subjected to single application of a voltage applied to a nonselected memory cell in the access.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.