Patent · US Active

Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device

US7422504B2 · kind B2 · utility

64Cited by
11References
16Claims
0Family size

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Key dates

Filing dateJun 3, 2005
Grant dateSep 9, 2008
Priority date
Expiry dateSep 25, 2026

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02B20/00
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0≦a1≦0.3, 0≦b1≦0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.