Compositions for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
US7422708B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2006 |
| Grant date | Sep 9, 2008 |
| Priority date | — |
| Expiry date | Mar 10, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.