Forming a thin film structure
US7422770B2 · kind B2 · utility
13Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2003 |
| Grant date | Sep 9, 2008 |
| Priority date | — |
| Expiry date | Dec 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6746
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus of forming a microcrystalline thin film comprises supplying a first gas and a second gas into a chamber containing a substrate during a first process, and supplying the second gas but not the first gas into the chamber during a second process. The first and second processes are performed plural times to form the microcrystalline thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.