Light emitting diode and method for manufacturing the same
US7422915B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 17, 2006 |
| Grant date | Sep 9, 2008 |
| Priority date | — |
| Expiry date | Apr 28, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
Abstract
A light emitting diode is disclosed. The light emitting diode comprises: a transparent substrate; a reflective layer located on a surface of the transparent substrate; a solder layer located on the other surface of the transparent substrate; a semiconductor epitaxial structure located on the solder layer, wherein the semiconductor epitaxial structure comprises a n-type contact layer, and the n-type contact layer can be a structure having a continuous flat surface, a structure having a continuous reticulate or bar surface, or a cylinder or prism structure having a discontinuous surface; and a transparent conductive layer located on the n-type contact layer of the semiconductor epitaxial structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.