Method of fabricating a light emitting device
US7422934B2 · kind B2 · utility
31Cited by
12References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2006 |
| Grant date | Sep 9, 2008 |
| Priority date | — |
| Expiry date | Aug 17, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/8792
Abstract
There is provided an inexpensive light emitting device and an electronic instrument using the same. In this invention, photolithography steps relating to manufacture of a transistor are reduced, so that the yield of the light emitting device is improved and the manufacturing period thereof is shortened. A feature is that a gate electrode is formed of conductive films of plural layers, and by using the selection ratio of those at the time of etching, the concentration of an impurity region formed in an active layer is adjusted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.