Semiconductor light-emitting device
US7423294B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2007 |
| Grant date | Sep 9, 2008 |
| Priority date | — |
| Expiry date | May 23, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light-emitting device includes: a semiconductor light-emitting element including a first conductive type semiconductor layer, an active layer including a light-emitting region, and a second conductive type semiconductor layer in this order; a filter having a transmission characteristic in which the transmittance in a direction parallel to the optical axis of induced emission light of light outputted from the semiconductor light-emitting element is higher than the transmittance in a direction different from the optical axis; and a semiconductor photodetector including a light-absorbing layer, the light-absorbing layer absorbing a part of light passing through the filter, wherein the filter and the semiconductor photodetector are laminated in this order on the second conductive type semiconductor layer of the semiconductor light-emitting element, and are formed with the semiconductor light-emitting element as one unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.