Semiconductor devices with a field shaping region
US7423299B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2004 |
| Grant date | Sep 9, 2008 |
| Priority date | — |
| Expiry date | May 6, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/118
Abstract
A semiconductor device, for example a diode (200), having a pn junction (101) has an insulating material field shaping region (201) adjacent, and possibly bridging, the pn junction. The field shaping region (201) preferably has a high dielectric constant and is coupled via capacitive voltage coupling regions (204,205) to substantially the same voltages as are applied to the pn junction. When a reverse voltage is applied across the pn junction (101) and the device is non-conducting, a capacitive electric field, is present in a part of the field shaping region which extends beyond a limit of the pn junction depletion region which would exist in the absence of the field shaping region (201), the electric field in the field shaping region inducing a stretched electric field limited to a correspondingly stretched pn junction depletion region (208,209) and an increased reverse breakdown voltage of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.