Pinned photodiode (PPD) pixel with high shutter rejection ratio for snapshot operating CMOS sensor

US7423302B2 · kind B2 · utility

Assignee

• Digital Imaging Systems GmbH · DE

Inventors

• Taner Dosluoglu · New York, US
• Guang Yang · Nanhu, CN

Key dates

• Filing date: Nov 21, 2005
• Grant date: Sep 9, 2008
• Expiry date: Jan 12, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/014

Abstract

A pixel image sensor has a high shutter rejection ratio that prevents substrate charge leakage to a floating diffusion storage node of the pixel image sensor and prevents generation of photoelectrons within the floating diffusion storage node and storage node control transistor switches of the pixel image sensor. The pixel image sensor that prevents substrate charge leakage of photoelectrons from pixel image sensor adjacent to the pixel image sensor. The pixel image sensor is fabricated on a substrate with an isolation barrier and a carrier conduction well. The isolation barrier formed underneath the floating diffusion storage node allows effective isolation by draining away the stray carriers and preventing them from reaching the floating diffusion storage node. The carrier conduction well in combination with the deep N-well isolation barrier separates the pinned photodiode region from the deep N-well isolation barrier that is underneath the floating diffusion storage node.