Semiconductor devices
US7423316B2 · kind B2 · utility
26Cited by
6References
8Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | May 12, 2005 |
| Grant date | Sep 9, 2008 |
| Priority date | — |
| Expiry date | Jun 15, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
The dense accumulation of hole carriers can be obtained over a wide range of a semiconductor region in a floating state formed within a body region of an IGBT. An n type semiconductor region (52) whose potential is floating is formed within a p− type body region (28). The n type semiconductor region (52) is isolated from an n+ type emitter region (32) and an n− type drift region (26) by the body region (28). Furthermore, a second electrode (62) is formed, so as to oppose to at least a part of the semiconductor region (52) via an insulator film (64). The second electrode (62) does not oppose to the emitter region (32).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.