Method for forming a trench capacitor
US7425486B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2005 |
| Grant date | Sep 16, 2008 |
| Priority date | — |
| Expiry date | Jan 4, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/37
Abstract
A method for forming a trench capacitor is presented in the following process steps. A trench is formed on a semiconductor substrate. A first trench dielectric is deposited into the trench without reaching a full height thereof. An etch stop layer is formed on the first trench dielectric and along inner surfaces of the trench. A second trench dielectric is deposited on the etch stop layer. The second trench dielectric and the etch stop layer are removed to expose the first trench dielectric in the trench. A conductive layer is formed on the first trench dielectric in the trench, such that the conductive layer, the first trench dielectric and the semiconductor substrate function as a trench capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.