Systems and methods for plasma etching
US7425504B2 · kind B2 · utility
0Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2004 |
| Grant date | Sep 16, 2008 |
| Priority date | — |
| Expiry date | Oct 15, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7687
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Systems and methods are disclosed for processing a semiconductor substrate by depositing a conductive layer on the substrate; patterning a set of insulating structures on the substrate; selectively back-biasing the substrate; depositing a layer of material on the substrate; and removing a part of the conductive layer selectively biased to attract cation bombardment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.