Method of manufacturing a dielectric film in a capacitor
US7425761B2 · kind B2 · utility
2Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2006 |
| Grant date | Sep 16, 2008 |
| Priority date | — |
| Expiry date | Oct 10, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing a dielectric layer for a capacitor including sequentially supplying and purging a first and a second precursor material for a first and a second predetermined amount of time, respectively, in an initial cycle, sequentially supplying and purging the first and the second precursor materials for a third predetermined amount of time, which is shorter than the first and/or second predetermined amount of time, in a post cycle, which follows the initial cycle, and repeating the initial and post cycles to form a dielectric layer having a predetermined thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.