Surface acoustic wave device
US7425788B2 · kind B2 · utility
10Cited by
4References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2007 |
| Grant date | Sep 16, 2008 |
| Priority date | — |
| Expiry date | Jan 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/14541
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In a surface acoustic wave device, a plurality of grooves are provided on a piezoelectric substrate, an electrode film defining an IDT electrode is formed by filling an electrode material in the grooves, an insulator layer, such as a SiO2 film, is arranged so as to cover the piezoelectric substrate and the electrode film formed in the grooves, and the surface of the insulator layer is flattened.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.