Giant magnetoresistive device with buffer-oxide layer between seed and ferromagnetic layers to provide smooth interfaces
US7426097B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2002 |
| Grant date | Sep 16, 2008 |
| Priority date | — |
| Expiry date | May 10, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/302
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An enhanced giant magnetoresistive device, and a method of manufacturing the same. The enhanced giant magnetoresistive (GMR) device includes a substrate over which is formed a seed layer. A buffer-oxide layer is formed over the seed layer. Formed over the buffer-oxide layer is a GMR stack. The GMR stack is formed as a three layer sandwich in which the two outside layers are fabricated from ferromagnetic materials, and the inner layer or spacer layer is formed from non-magnetic, conducting materials. The GMR stack may also take the form of spin valves, and/or other GMR stacks. The buffer-oxide layer may be various thicknesses and provide desirable texturing or non-waviness, both of which may allow for a thin spacer layer. Further, the buffer-oxide layer may be configured to prevent Néel-type-orange-peel coupling from dominating RKKY coupling in the GMR device, which may allow for a thin spacer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.