Complementary giant magneto-resistive memory with full-turn word line
US7426133B2 · kind B2 · utility
1Cited by
9References
19Claims
0Family size
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Key dates
| Filing date | Oct 24, 2005 |
| Grant date | Sep 16, 2008 |
| Priority date | — |
| Expiry date | Dec 19, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magneto-resistive memory system is presented that includes a radiation-hardened and low power memory cell. The magneto-resistive memory cell includes a word line select transistor in the cell to help eliminate unselected cell disturbances. Furthermore, the magneto-resistive memory cell includes a full-turn write word line that writes true and complimentary bit values using less current than previous cell architectures. The improved memory cell may be used in a memory system with precision current drivers and auto-zero sense amplifiers in order to further lower power and improve overall system reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.