Low dielectric constant insulating material and semiconductor device using the material
US7427443B2 · kind B2 · utility
6Cited by
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6Claims
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Key dates
| Filing date | Mar 26, 2004 |
| Grant date | Sep 23, 2008 |
| Priority date | — |
| Expiry date | Jul 1, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The use of a material possessing a six-member borazine ring consisting of at least boron and nitrogen elements in the form of a low dielectric constant insulating film in a hard mask, a Cu diffusion barrier layer and an etching stopper which are necessary when low dielectric constant interlayer insulating films and Cu wiring in the multilayer interconnection of an LSI allows the parasitic capacity between the multilayer wirings to be suppressed and enables the ULSI to produce a high-speed operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.