Method of making light emitting device with silicon-containing encapsulant
US7427523B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 2006 |
| Grant date | Sep 23, 2008 |
| Priority date | — |
| Expiry date | Mar 24, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/854
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a light emitting device is disclosed. The method includes providing a light emitting diode and forming an encapsulant in contact with the light emitting diode; wherein forming the encapsulant includes contacting the light emitting diode with a photopolymerizable composition comprising a silicon-containing resin, a metal-containing catalyst, and surface treated particles, the silicon-containing resin comprises silicon-bonded hydrogen and aliphatic unsaturation, the surface treated particles comprising nonabsorbing metal oxide particles, semiconductor particles, or combinations thereof, and applying actinic radiation having a wavelength of 700 nm or less to initiate hydrosilylation within the silicon-containing resin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.